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| ? 2013-2014 microchip technology inc. ds20005255b-page 1 MCP16311/2 features ? up to 95% efficiency ? input voltage range: 4.4v to 30v ? 1a output current capability ? output voltage range: 2.0v to 24v ? qualification: aec-q100 rev. g, grade 1 (-40c to 125c) ? integrated n-channel high-side and low-side switches: -170m ? , low side -300m ? , high side ? stable reference voltage: 0.8v ? automatic pulse frequency modulation/pulse- width modulation (pfm/pwm) operation ( MCP16311 ): - pfm operation disabled ( mcp16312 ) - pwm operation: 500 khz ? low device shutdown current: 3 a typical ? low device quiescent current: - 44 a (non-switching, pfm mode) ? internal compensation ? internal soft-start: 300 s (en low-to-high) ? peak current mode control ? cycle-by-cycle peak current limit ? undervoltage lockout (uvlo): - 4.1v typical to start - 3.6v typical to stop ? overtemperature protection ? thermal shutdown: - +150c - +25c hysteresis applications ?pic ? /dspic ? microcontroller bias supply ? 24v industrial input dc-dc conversion ? general purpose dc-dc conversion ? local point of load regulation ? automotive battery regulation ? set-top boxes ? cable modems ? wall transformer regulation ? laptop computers ? networking systems ? ac-dc digital control bias ? distributed power supplies general description the MCP16311/2 is a compact, high-efficiency, fixed frequency, synchronous step-down dc-dc converter in an 8-pin msop, or 2 x 3 tdfn package that operates from input voltage sources up to 30v. integrated features include a high-side and a low-side switch, fixed frequency peak current mode control, internal compensation, peak current limit and overtemperature protection. the MCP16311/2 provides all the active functions for local dc-dc conversion, with fast transient response and accurate regulation. high converter efficiency is achieved by integrating the current-limited, low-resistance, high-speed high-side and low-side switches and associated drive circuitry. the MCP16311 is capable of running in pwm/pfm mode. it switches in pfm mode for light load conditions and for large buck conversion ratios. this results in a higher efficiency over all load ranges. the mcp16312 runs in pwm-only mode, and is recommended for noise-sensitive applications. the MCP16311/2 can supply up to 1a of continuous current while regulating the output voltage from 2v to 12v. an integrated, high-performance peak current mode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions common in power systems. the en input is used to turn the device on and off. while off, only a few micro amps of current are consumed from the input. output voltage is set with an external resistor divider. the MCP16311/2 is offered in small msop-8 and 2 x 3 tdfn surface mount packages. package type en v cc v in boost sw 1 2 3 4 8 7 6 5 p gnd v fb ep 9 a gnd 5 1 2 3 a gnd sw en v in v fb MCP16311/2 msop 8 7 6 boost 4 p gnd v cc MCP16311/2 2x3 tdfn* * includes exposed thermal pad (ep); see ta b l e 3 - 1 . 30v input, 1a output, high-efficiency, integrated synchronous switch step-down regulator
MCP16311/2 ds20005255b-page 2 ? 2013-2014 microchip technology inc. typical applications 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 efficiency (%) i out (ma) pwm only pwm/pfm v in = 12v out = 5v v out = 3.3v v v in gnd v fb sw v in 4.5v to 30v v out 3.3v @ 1a c out 2x10f c in 2x10f l 1 15 h boost 31.6 k ? 10 k ? en c boost 100 nf v cc c vcc 1f v in gnd v fb sw v in 6v to 30v v out 5v, @ 1a c out 2x10f c in 2x10f l 1 22 h boost 52.3 k ? 10 k ? en c boost 100 nf v cc c vcc 1f ? 2013-2014 microchip technology inc. ds20005255b-page 3 MCP16311/2 1.0 electrical characteristics absolute maximum ratings ? v in, sw ............................................................... -0.5v to 32v boost ? gnd ................................................... -0.5v to 38v boost ? sw voltage........................................ -0.5v to 6.0v v fb voltage ........................................................ -0.5v to 6.0v en voltage ............................................. -0.5v to (v in +0.3v) output short-circuit current ................................. continuous power dissipation ....................................... internally limited storage temperature ....................................-65c to +150c ambient temperature with power applied ....-40c to +125c operating junction temperature...................-40c to +150c esd protection on all pins: hbm ..................................................................... 1 kv mm ......................................................................200v ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical characteristics: unless otherwise indicated, t a =+25c, v in =v en =7v, v boost -v sw =5.0v, v out =5.0v, i out = 100 ma, l = 22 h, c out =c in = 2 x 10 f x7r ceramic capacitors. boldface specifications apply over the t a range of -40c to +125c. parameters sym. min. typ. max. units conditions v in supply voltage input voltage v in 4.4 ? 30 v note 1 quiescent current i q ?44 60 a nonswitching, v fb =0.9v quiescent current - pfm mode i q_pfm ?85 ?aswitching, i out =0 ( MCP16311 ) quiescent current - pwm mode i q_pwm ?3.8 8 ma switching, i out =0 ( mcp16312 ) quiescent current - shutdown i q_shdn ?3 9 a v out =en=0v v in undervoltage lockout undervoltage lockout start uvlo strt ?4.1 4.4 vv in rising undervoltage lockout stop uvlo stop 3.18 3.6 ? v v in falling undervoltage lockout hysteresis uvlo hys 0.2 0.5 1 v output characteristics feedback voltage v fb 0.784 0.800 0.816 vi out =5ma output voltage adjust range v out 2.0 ? 24 v note 2 , note 3 feedback voltage line regulation ?? v fb /v fb )/ ? v in -0.15 0.01 0.15 %/v v in = 7v to 30v, i out =50ma feedback voltage load regulation ?? v fb / v fb ? ?0.25 ? %i out = 5 ma to 1a, mcp16312 note 1: the input voltage should be greater than the output voltage plus headroom voltage; higher load currents increase the input voltage necessary for regulation. see characterization graphs for typical input-to-output operating voltage range. 2: for v in MCP16311/2 ds20005255b-page 6 ? 2013-2014 microchip technology inc. note: unless otherwise indicated, v in =en=7v, c out =c in =2x10f, l =22h, v out =5.0v, i load =100ma, t a =+25c , 8l-msop package . figure 2-7: max i out vs.v in. figure 2-8: v fb vs. temperature; v out =3.3v. figure 2-9: switch r dson vs. temperature. figure 2-10: undervoltage lockout vs. temperature. figure 2-11: enable threshold voltage vs. temperature. figure 2-12: v out vs. temperature. 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 i out (ma) v in (v) v out = 3.3v v out = 5v v out = 12v 0.79 0.792 0.794 0.796 0.798 0.8 -40 -25 -10 5 20 35 50 65 80 95 110 125 feedback voltage (v) temperature (c) v in =7v v out = 3.3v i out = 100 ma 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 switch r dson ( : ) temperature (c) low side high side v in = 12v v out = 5v i out = 500 ma 3 3.4 3.8 4.2 4.6 5 -40 -25 -10 5 20 35 50 65 80 95 110 125 input voltage (v) temperature (c) uvlo start uvlo stop 0.9 1 1.1 1.2 1.3 1.4 -40 -25 -10 5 20 35 50 65 80 95 110 125 enable voltage (v) temperature (c) high low v in = 12v v out = 3.3v i out = 200 ma 4.97 4.98 4.99 5 5.01 5.02 5.03 -40 -25 -10 5 20 35 50 65 80 95 110 125 output voltage (v) temperature (c) v in = 12v v out = 5v i out = 100 ma ? 2013-2014 microchip technology inc. ds20005255b-page 7 MCP16311/2 note: unless otherwise indicated, v in =en=7v, c out =c in =2x10f, l =22h, v out =5.0v, i load =100ma, t a =+25c , 8l-msop package . figure 2-13: input quiescent current vs. temperature. figure 2-14: input quiescent current vs. input voltage. figure 2-15: pfm no load input current vs. input voltage, MCP16311. figure 2-16: pwm no load input current vs.v in , mcp16312. figure 2-17: pfm/pwm i out threshold vs. v in . figure 2-18: skipping/pwm i out threshold vs. input voltage. 0 20 40 60 -40 -25 -10 5 20 35 50 65 80 95 110 125 quiescent current (a) temperature (c) non-swithcing shutdown v in = 12v v out = 5v 0 10 20 30 40 50 5 1015202530 quiescent current (a) input voltage (c) non-switching shutdown v out = 3.3v 40 60 80 100 120 5 1015202530 no load input current (a) input voltage (v) v out = 3.3v 1 1.2 1.4 1.6 1.8 5 1015202530 input current (ma) v in (v) v out = 3.3v 0 25 50 75 100 125 150 5 1015202530 output current (ma) v in (v) v out = 3.3v v out = 5v v out = 12v 0 10 20 30 40 50 5 1015202530 output current (ma) v in (v) v out = 5v v out = 3.3v v out = 12v MCP16311/2 ds20005255b-page 8 ? 2013-2014 microchip technology inc. note: unless otherwise indicated, v in =en=7v, c out =c in =2x10f, l =22h, v out =5.0v, i load =100ma, t a =+25c , 8l-msop package . figure 2-19: typical minimum input voltage vs. output current. figure 2-20: switching frequency vs. temperature. figure 2-21: start-up from enable. figure 2-22: start-up from v in . figure 2-23: short-circuit response. figure 2-24: load transient response. 3.5 4 4.5 0 200 400 600 800 1000 v in (v) output current (ma) to start to stop v out = 3.3v 450 475 500 525 -40 -25 -10 5 20 35 50 65 80 95 110 125 switching frequency (khz) temperature (c) v in = 12v v out = 3.3v i out = 200 ma v out 2 v/div en 2 v/div 80 s/div v out 2 v/div v in 5 v/div 200 s/div v out 2 v/div i out 2a/div 10 s/div i l 500 ma/div v out 100 mv/div i out 500 ma/div 200 s/div ac coupled load step from 100 ma to 800 ma ? 2013-2014 microchip technology inc. ds20005255b-page 9 MCP16311/2 note: unless otherwise indicated, v in =en=7v, c out =c in =2x10f, l =22h, v out =5.0v, i load =100ma, t a =+25c , 8l-msop package . figure 2-25: line transient response. figure 2-26: pfm light load switching waveforms. figure 2-27: pwm light load switching waveforms. figure 2-28: heavy load switching waveforms. figure 2-29: pfm to pwm transition; load step from 5 ma to 100 ma. v out 50 mv/div v in 5 v/div 400 s/div ac coupled v in step from 7v to 12v v out 100 mv/div i l 200 ma/div 20 s/div v in = 24v sw 10 v/div i out = 25 ma ac coupled v out 10 mv/div i l 100 ma/div 1s/div v in = 24v sw 10 v/div i out = 15 ma ac coupled v out 50 mv/div i l 200 ma/div 2s/div v in = 12v sw 10 v/div v out = 5v i out = 800 ma ac coupled v out 100 mv/div load current 50 ma/div 400 s/div v in = 12v sw 5 v/div v out = 5v ac coupled MCP16311/2 ds20005255b-page 10 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 11 MCP16311/2 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . 3.1 feedback voltage pin (v fb ) the v fb pin is used to provide output voltage regulation by using a resistor divider. the v fb voltage will be 0.800v typical with the output voltage in regulation. 3.2 internal bias pin (v cc ) the v cc internal bias is derived from the input voltage v in . v cc is set to 5.0v typical. the v cc is used to pro- vide a stable low bias voltage for the upper and lower gate drive circuits. this output should be decoupled to a gnd with a 1 f capacitor, x7r. this capacitor should be connected as close as possible to the v cc and a gnd pin. 3.3 enable pin (en) the en pin is a logic-level input used to enable or disable the device and lower the quiescent current while disabled. a logic high (> 1.3v) will enable the reg- ulator output. a logic low (< 1v) will ensure that the reg- ulator is disabled. 3.4 power supply input voltage pin (v in ) connect the input voltage source to v in . the input source should be decoupled to gnd with a 4.7 f-20 f capacitor, depending on the impedance of the source and output current. the input capacitor provides current for the switch node and a stable volt- age source for the internal device power. this capacitor should be connected as close as possible to the v in and gnd pins. for light-load applications, a 2.2 f x7r or x5r ceramic capacitor can be used. 3.5 analog ground pin (a gnd ) this ground is used by most internal circuits, such as the analog reference, control loop and other circuits. 3.6 power ground pin (p gnd ) this is a separate ground connection used for the low- side synchronous switch.the length of the trace from the input cap return, output cap return and gnd pin should be made as short as possible to minimize the noise in the system. the power ground and the analog ground should be connected in a single point. 3.7 switch node pin (sw) the switch node pin is connected internally to the low- side and high-side switch, and externally to the sw node, consisting of the inductor and boost capacitor. the sw node can rise very fast as a result of the internal switch turning on. 3.8 boost pin (boost) the high side of the floating supply used to turn the integrated n-channel high-side mosfet on and off is connected to the boost pin. 3.9 exposed thermal pad pin (ep) there is an internal electrical connection between the ep and the p gnd and a gnd pins. table 3-1: pin function table MCP16311/2 2x3 tdfn MCP16311/2 msop symbol description 11v fb output voltage feedback pin. connect v fb to an external resistor divider to set the output voltage. 22v cc internal regulator output pin. bypass capacitor is required on this pin to provide high peak current for gate drive. 3 3 en enable pin. logic high enables the operation. do not allow this pin to float. 44v in input supply voltage pin for power and internal biasing. 55p gnd power ground pin 6 6 sw output switch node pin, connects to the inductor and the bootstrap capacitor. 7 7 boost boost voltage pin that supplies the driver used to control the high- side nmos switch. a bootstrap capacitor is connected between the boost and sw pins. 88a gnd signal ground pin 9 ? ep exposed thermal pad MCP16311/2 ds20005255b-page 12 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 13 MCP16311/2 4.0 detailed description 4.1 device overview the MCP16311/2 is a high input voltage step-down regulator, capable of supplying 1a typical to a regulated output voltage from 2.0v to 12v. internally, the trimmed 500 khz oscillator provides a fixed frequency, while the peak current mode control architecture varies the duty cycle for output voltage regulation. an internal floating driver is used to turn the high-side integrated n-channel mosfet on and off. the power for this driver is derived from an external boost capacitor whose energy is replenished when the low-side n- channel mosfet is turned on. 4.1.1 pwm/pfm mode option the MCP16311 selects the best operating switching mode (pfm or pwm) for high efficiency across a wide range of load currents. switching to pfm mode at light- load currents results in a low quiescent current. during the sleep period (between two packets of switching cycles), the MCP16311 draws 44 a (typical) from the supply line. the switching pulse packets represent a small percentage of the total running cycle, and the overall average current drawn from power line is small. the disadvantages of pwm/pfm mode are higher output ripple voltage and variable pfm mode frequency. the pfm mode threshold is a function of the input voltage, output voltage and load (see figure 2-17 ). 4.1.2 pwm-only mode option in the mcp16312 devices, the pfm mode is disabled and the part runs only in pwm over the entire load range. during normal operation, the mcp16312 continues to operate at a constant 500 khz switching frequency, keeping the output ripple voltage lower than in pfm mode. at lighter loads, the mcp16312 devices begin to skip pulses. figure 2-18 represents the input voltage versus load current for the pulse skipping threshold in pwm-only mode. because the mcp16312 has very low output voltage ripple, it is recommended for noise-sensitive applications. 4.1.3 internal reference voltage (v fb ) an integrated precise 0.8v reference combined with an external resistor divider sets the desired converter output voltage. the resistor divider range can vary without affecting the control system gain. high-value resistors consume less current, but are more susceptible to noise. consult typical applications for the recommended resistors value. 4.1.4 internal bias regulator (v cc ) an internal low dropout voltage regulator (ldo) is used to supply 5.0v to all the internal circuits. the ldo regulates the input voltage (v in ) and can supply enough current (up to 50 ma) to sustain the drivers and internal bias circuitry. the v cc pin must be decoupled to ground with a 1 f capacitor. in the event of a thermal shut down, the ldo will shut down. there is a short-circuit protection for the v cc pin, with a threshold set at 150 ma. in pfm switching mode, during sleep periods, the v cc regulator enters low quiescent current mode to avoid unnecessary power dissipation. avoid driving any external load using the v cc pin. 4.1.5 internal compensation all control system components necessary for stable operation over the entire device operating range are integrated, including the error amplifier and inductor current slope compensation. to add the proper amount of slope compensation, the inductor value changes along with the output voltage (see ta b l e 5 - 1 ). 4.1.6 external components external components consist of: ? input capacitor ? output filter (inductor and capacitor) ? boost capacitor ? resistor divider the selection of the external inductor, output capacitor and input capacitor is dependent upon the output volt- age and the maximum output current. 4.1.7 enable input the enable input (en) is used to disable the device. if disabled, the device consumes a minimum current from the input. once enabled, the internal soft start controls the output voltage rate of rise, preventing high-inrush current and output voltage overshoot. there is no internal pull-up or pull-down resistor. to enable the converter, the en pin must be pulled high. to disable the converter, the en pin must be pulled low. table 4-1: part number selection part number pwm/pfm pwm MCP16311 x ? mcp16312 ? x MCP16311/2 ds20005255b-page 14 ? 2013-2014 microchip technology inc. 4.1.8 soft start the internal reference voltage rate of rise is controlled during start-up, minimizing the output voltage overshoot and the inrush current. 4.1.9 undervoltage lockout an integrated undervoltage lockout (uvlo) prevents the converter from starting until the input voltage is high enough for normal operation. the converter will typically start at 4.1v and operate down to 3.6v. hysteresis is added to prevent starting and stopping during start-up as a result of loading the input voltage source. 4.1.10 overtemperature protection overtemperature protection limits the silicon die temperature to +150c by turning the converter off. the normal switching resumes at +125c. figure 4-1: MCP16311/2 block diagram. c out c boost slope comp pwm latch + - overtemp uvlo r comp amp + - c comp r comp hs drive cs v reg bg ref ss v ref otemp 500 khz osc s v out v out r sense v in en r top r bot boost sw p gnd fb v ref shdn all blocks + - c in + + ls drive v cc c vcc v cc v cc pfm pfm ctr v ref a gnd ? 2013-2014 microchip technology inc. ds20005255b-page 15 MCP16311/2 4.2 functional description 4.2.1 step-down or buck converter the MCP16311/2 is a synchronous step-down or buck converter capable of stepping input voltages ranging from 4.4v to 30v down to 2.0v to 24v for v in >v out . the integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle. the integrated low-side switch is used to freewheel current when the high-side switch is turned off. high efficiency is achieved by using low-resistance switches and low equivalent series resistance (esr) inductors and capacitors. when the high-side switch is turned on, a dc voltage is applied to the inductor (v in ? v out ), resulting in a positive linear ramp of inductor current. when the high-side switch turns off and the low-side switch turns on, the applied inductor voltage is equal to ?v out , resulting in a negative linear ramp of inductor current. in order to ensure there is no shoot- through current, a dead time where both switches are off is implemented between the high-side switch turning off and the low-side switch turning on, and the low-side switch turning off and the high-side switch turning on. for steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. while operating in steady state, the switch duty cycle must be equal to the relationship of v out /v in for constant output voltage regulation, under the condition that the inductor current is continuous or never reaches zero. for discontinuous inductor current operation, the steady-state duty cycle will be less than v out /v in to maintain voltage regulation. when the inductor current reaches zero, the low-side switch is turned off so that current does not flow in the reverse direction, keeping the efficiency high. the average of the chopped input voltage or sw node voltage is equal to the output voltage, while the average inductor current is equal to the output current. figure 4-2: synchronous step-down converter. sw i l v in i out v out continuous inductor current mode s 1 on s 2 on sw i l v in i out discontinuous inductor current mode s 1 on s 2 on both off v in l i l c out v out s 2 s 1 MCP16311/2 ds20005255b-page 16 ? 2013-2014 microchip technology inc. 4.2.2 peak current mode control the MCP16311/2 integrates a peak current mode control architecture, resulting in superior ac regulation while minimizing the number and size of voltage loop compensation components for integration. peak current mode control takes a small portion of the inductor current, replicates it, and compares this replicated current sense signal with the error voltage. in practice, the inductor current and the internal switch current are equal during the switch-on time. by adding this peak current sense to the system control, the step- down power train system can be approximated by a first order system rather than a second order system. this reduces the system complexity and increases its dynamic performance. for pulse-width modulation (pwm) duty cycles that exceed 50%, the control system can become bimodal, where a wide pulse followed by a short pulse repeats instead of the desired fixed pulse width. to prevent this mode of operation, an internal compensating ramp is summed into the current sense signal. 4.2.3 pulse-width modulation the internal oscillator periodically starts the switching period, which in the MCP16311/2?s case occurs every 2 s or 500 khz. with the high-side integrated n-channel mosfet turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. once this occurs, the high-side switch turns off and the low-side switch turns on. the error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output lc filter. if the regulated output voltage is lower than its target, the inverting error amplifier output rises. this results in an increase in the inductor current to correct for errors in the output voltage. the fixed frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. the pwm latch is set by turning off the high- side internal switch and preventing it from turning on until the beginning of the next cycle. the mcp16312 devices will operate in pwm-only mode even during periods of light load operation. by operating in pwm-only mode, the output ripple remains low and the frequency is constant ( figure 2-28 ). operating in fixed pwm mode results in lower efficiency during light-load operation (when compared to pfm mode (MCP16311)). when working close to the boundary conduction threshold, a jitter on the sw node may occur, reflecting in the output voltage. although the low-frequency output component is very small, it may be desirable to completely eliminate this component. to achieve this, an rc snubber between the sw node and gnd is used. typical values for the snubber are: 680 pf and 430 ? . using such a snubber completely eliminates the jitter on the sw node, but slightly decreases the overall efficiency of the converter. 4.2.4 pfm mode operation the MCP16311 devices are capable of automatic operation in normal pwm or pfm mode to maintain high efficiency at all loads. in pfm mode, the output ripple has a variable frequency component that changes with the input voltage and output current. with no load, the quiescent current drawn from the output is very low. there are two comparators that decide when device starts switching in pfm mode. one of the comparators is monitoring the output voltage and has a reference of 810 mv with 10 mv hysteresis. if the load current is low, the output rises and triggers the comparator, which will put the logic control of the drivers and other block circuitry (including the internal regulator v cc ) in sleep mode to minimize the power consumption during the switching cycle?s off period. when the output voltage drops below its nominal value, pfm operation pulses one or several times to bring the output back into regulation ( figure 2-26 ). the second comparator fixes the minimum duty cycle for pfm mode. minimum duty cycle in pfm mode depends on the sensed peak current and input voltage. as a result, the pfm-to-pwm mode threshold depends on load current and value of the input voltage ( figure 2-17 ). if the output load current rises above the upper threshold, the MCP16311 transitions smoothly into pwm mode. ? 2013-2014 microchip technology inc. ds20005255b-page 17 MCP16311/2 4.2.5 high-side drive the MCP16311/2 features an integrated high-side n-channel mosfet for high-efficiency step-down power conversion. an n-channel mosfet is used for its low resistance and size (instead of a p-channel mosfet). the n-channel mosfet gate must be driven above its source to fully turn on the device, result- ing in a gate-drive voltage above the input to turn on the high-side n-channel. the high-side n-channel source is connected to the inductor and boost cap or switch node. when the high-side switch is off and the low-side switch is on, the inductor current flows through the low- side switch, providing a path to recharge the boost cap from the boost voltage source. the voltage for the boost cap is supplied from the internal regulator (vcc). an internal boost blocking diode is used to prevent current flow from the boost cap back into the regulator during the internal switch-on time. if the boost voltage decreases significantly, the low side will be forced low for 90 ns in order to charge the boost capacitor. MCP16311/2 ds20005255b-page 18 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 19 MCP16311/2 5.0 application information 5.1 typical applications the MCP16311/2 synchronous step-down converter operates over a wide input range, up to 30v maximum. typical applications include generating a bias or v dd voltage for pic ? microcontrollers, digital control system bias supply for ac-dc converters and 12v industrial input and similar applications. 5.2 adjustable output voltage calculations to calculate the resistor divider values for the MCP16311/2 adjustable version, use equation 5-1 . r top is connected to v out , r bot is connected to a gnd , and both are connected to the v fb input pin. equation 5-1: resistor divider calculation example 5-1: 3.3v resistor divider example 5-2: 5.0v resistor divider example 5-3: 12.0v resistor divider the error amplifier is internally compensated to ensure loop stability. external resistor dividers, inductance and output capacitance all have an impact on the control system and should be selected carefully and evaluated for stability. a 10 k ? bottom resistor is recommended as a good trade-off for quiescent current and noise immunity. 5.3 general design equations the step-down converter duty cycle can be estimated using equation 5-2 while operating in continuous inductor current mode. this equation accounts for the forward drop of the two internal n-channel mosfets. as load current increases, the voltage drop in both internal switches will increase, requiring a larger pwm duty cycle to maintain the output voltage regulation. switch voltage drop is estimated by multiplying the switch current times the switch resistance or r dson . equation 5-2: continuous inductor current duty cycle the MCP16311/2 device features an integrated slope compensation to prevent bimodal operation of the pwm duty cycle. internally, half of the inductor current down slope is summed with the internal current sense signal. for the proper amount of slope compensation, it is recommended to keep the inductor down-slope current constant by varying the inductance with v out , where k = 0.22 v/h. equation 5-3: for example, for v out = 3.3v, an inductance of 15 h is recommended. v out =3.3v v fb =0.8v r bot =10k ? r top =31.25k ? (standard value = 31.6 k ? ) v out = 3.328v (using standard value) v out =5.0v v fb =0.8v r bot =10k ? r top =52.5k ? (standard value = 52.3 k ? ) v out = 4.984v (using standard values) v out =12.0v v fb =0.8v r bot =10k ? r top =140k ? (standard value = 140 k ? ) r top r bot v out v fb ------------ -1 ? ?? ?? ? = table 5-1: recommended inductor values v out kl standard 2.0v 0.20 10 h 3.3v 0.22 15 h 5.0v 0.23 22 h 12v 0.21 56 h 15v 0.22 68 h 24v 0.24 100 h d v out i lsw r dsonl ? ?? + v in i hsw r dsonh ? ?? ? ------------------------------------------------------------ - = kv out l ? = MCP16311/2 ds20005255b-page 20 ? 2013-2014 microchip technology inc. 5.4 input capacitor selection the step-down converter input capacitor must filter the high-input ripple current that results from pulsing or chopping the input voltage. the MCP16311/2 input voltage pin is used to supply voltage for the power train and as a source for internal bias. a low equivalent series resistance (esr), preferably a ceramic capacitor, is recommended. the necessary capacitance is dependent upon the maximum load current and source impedance. three capacitor parameters to keep in mind are the voltage rating, equivalent series resistance and the temperature rating. for wide temperature range applications, a multi-layer x7r dielectric is recommended, while for applications with limited temperature range, a multi-layer x5r dielectric is acceptable. typically, input capacitance between 10 f and 20 f is sufficient for most applications. for applications with 100 ma to 200 ma load, a 4.7 f to 2.2 f x7r capacitor can be used, depending on the input source and its impedance. in case of an application with high variations of the input voltage, a higher capacitor value is recommended. the input capacitor voltage rating must be v in plus margin. table 5-2 contains the recommended range for the input capacitor value. 5.5 output capacitor selection the output capacitor provides a stable output voltage during sudden load transients and reduces the output voltage ripple. as with the input capacitor, x5r and x7r ceramic capacitors are well suited for this application. for typical applications, the output capacitance can be as low as 10 f ceramic and as high as 100 f electrolytic. in a typical application, a 20 f output capacitance usage will result in a 10 mv output ripple. the amount and type of output capacitance and equivalent series resistance will have a significant effect on the output ripple voltage and system stability. the range of the output capacitance is limited due to the integrated compensation of the MCP16311/2. see table 5-2 for the recommended output capacitor range. the output voltage capacitor rating should be a minimum of v out plus margin. 5.6 inductor selection the MCP16311/2 is designed to be used with small surface-mount inductors. several specifications should be considered prior to selecting an inductor. to optimize system performance, low dcr inductors should be used. to optimize system performance, the inductance value is determined by the output voltage ( tab l e 5 - 1 ) so the inductor ripple current is somewhat constant over the output voltage range. equation 5-4: inductor ripple current example 5-4: equation 5-5: inductor peak current for this example, an inductor with a current saturation rating of minimum 960 ma is recommended. low dcr inductors result in higher system efficiency. a trade-off between size, cost and efficiency is made to achieve the desired results. table 5-2: capacitor value range parameter min. max. c in 2.2 f none c out 20 f none v in =12v v out =3.3v i out =800ma table 5-3: MCP16311/2 recommended 3.3v v out inductors part number value (h) dcr ( ? ) i sat (a) size wxlxh (mm) coilcraft xal4040 15 0.109 2.8 4.0x4.0x2.1 lps6235 15 0.125 2.00 6.0x6.0x3.5 mss6132 15 0.135 1.56 6.1x6.1x3.2 xal6060 15 0.057 1.78 6.36x6.5x6.1 mss7341 15 0.057 1.78 7.3x7.3x4.1 ? i l v in v out ? l --------------------------- -t on ? = i lpk ? i l 2 -------- i out + = where: inductor ripple current = 319 ma inductor peak current = 960 ma ? 2013-2014 microchip technology inc. ds20005255b-page 21 MCP16311/2 5.7 boost capacitor the boost capacitor is used to supply current for the internal high-side drive circuitry that is above the input voltage. the boost capacitor must store enough energy to completely drive the high-side switch on and off. a 100 nf x5r or x7r capacitor is recommended for all applications. the boost capacitor maximum voltage is 5v. 5.8 v cc capacitor the v cc internal bias regulates at 5v. the v cc pin is current limited to 50 ma and protected from a short- circuit condition at 150 ma load. the v cc regulator must sustain all load and line transients because it supplies the internal drivers for power switches. for stability reasons, the v cc capacitor must be at least 1 f x7r ceramic for extended temperature range, or x5r for limited temperature range. 5.9 mcp16312 ? led constant current driver mcp16312 can be used to drive an led or a string of leds. the process of transforming the mcp16312 from a constant voltage source into a constant current source is simple. it implies that the sensing/feedback for the current is on the low side by adding a resistor in series with the string of leds. when using the mcp16312 as an led driver, care must be taken when selecting the sense resistor. due to the high feedback voltage of 0.8v, there will be significant losses on the sense resistor, so a larger package with better power dissipation must be selected. another important aspect when creating such an application is the value of the inductor. the value of the inductor needs to follow equation 5-3 or, as a guideline, table 5-1 , where the output voltage is approximated as the sum of the forward voltages of the leds and a 0.8v headroom for the sense resistor. a typical application is shown in figure 5-3 . the following equations are used to determine the value and the losses for the sense resistor: equation 5-6: example 5-5: 5.10 thermal calculations the MCP16311/2 is available in msop-8 and dfn-8 packages. by calculating the power dissipation and applying the package thermal resistance ( ja ), the junction temperature is estimated. the maximum continuous junction temperature rating for the MCP16311/2 is +125c. to quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. given the measured efficiency, the internal power dissipation is estimated in equation 5-7 . this power dissipation includes all internal and external component losses. for a quick internal estimate, subtract the estimated inductor dcr loss from the p dis calculation in equation 5-7 . equation 5-7: total power dissipation estimate wurth elektronik ? 74408943150 15 0.118 1.7 4.8x4.8x3.8 744062150 15 0.085 1.1 6.8x6.8x2.3 744778115 15 0.1 1.75 7.3x7.3x3.2 7447779115 15 0.07 2.2 7.3x7.3x4.5 coiltronics ? sd25 15 0.095 1.08 5.2x5.2x2.5 sd6030 14.1 0.103 1.1 6.0x6.0x3.0 tdk - epc ? b82462g4153m 15 0.097 1.05 6.0x6.0x3.0 b82462a4153k 15 0.21 1.5 6.0x6.0x3.0 table 5-3: MCP16311/2 recommended 3.3v v out inductors part number value (h) dcr ( ? ) i sat (a) size wxlxh (mm) i led = 400 ma v fb =0.8v v f = 1 x 3.2v (one white led is used) r b =2 ? p losses = 0.32 w (sense resistor losses) l=22h r b v fb i led ----------- = p losses v fb i led ? = where: v fb = feedback voltage p dis v out i out ? efficiency ------------------------------ -v out i out ? ?? ? = MCP16311/2 ds20005255b-page 22 ? 2013-2014 microchip technology inc. the difference between the first term, input power, and the second term, power delivered, is the total system power dissipation. the inductor losses are estimated by p l =i out 2 xl dcr . example 5-6: power dissipation ? MCP16311/2 msop package example 5-7: power dissipation ? MCP16311/2 dfn package v in =12v v out =5.0v i out =0.8a efficiency = 92.5% total system dissipation = 324 mw l dcr =0.15 ? p l =96 mw MCP16311/2 internal power dissipation estimate: p dis ?p l =228mw ? ja =211c/w estimated junction temperature rise = +48.1c v in =12v v out =3.3v i out =0.8a efficiency = 90% total system dissipation = 293 mw l dcr =0.15 ? p l =96mw MCP16311 internal power dissipation estimate: p dis ?p l =197mw ? ja =68c/w estimated junction temperature rise = +13.4c ? 2013-2014 microchip technology inc. ds20005255b-page 23 MCP16311/2 5.11 printed circuit board (pcb) layout information good pcb layout techniques are important to any switching circuitry, and switching power supplies are no different. when wiring the switching high-current paths, short and wide traces should be used. therefore, it is important that the input and output capacitors be placed as close as possible to the MCP16311/2 to minimize the loop area. the feedback resistors and feedback signal should be routed away from the switching node and the switching current loop. when possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference. a good MCP16311/2 layout starts with the placement of the input capacitor, which supplies current to the input of the circuit when the switch is turned on. in addition to supplying high-frequency switch current, the input capacitor also provides a stable voltage source for the internal MCP16311/2 circuitry. unstable pwm opera- tion can result if there are excessive transients or ring- ing on the v in pin of the MCP16311/2 device. in figure 5-1 , the input capacitors are placed close to the v in pins. a ground plane on the bottom of the board provides a low-resistive and low-inductive path for the return current. the next priority in placement is the freewheeling current loop formed by output capacitors and inductance (l1), while strategically placing the out- put capacitor ground return close to the input capacitor ground return. then, c boost should be placed between the boost pin and the switch node pin. this leaves space close to the MCP16311/2 v fb pin to place r top and r bot . the feedback loop must be routed away from the switch node, so noise is not coupled into the high-impedance v fb input. figure 5-1: msop-8 recommended layout, 5v output design. v in gnd v fb sw v in 12v v out 5v @ 1a c out c in v cc c vcc l1 c boost boost r t r b r en component value c in 2 x 10 f c out 2 x 10 f l1 22 h r t 52.3 k ? r b 10 k ? r en 1m ? c vcc 1f c boost 0.1 f en MCP16311/2 ds20005255b-page 24 ? 2013-2014 microchip technology inc. figure 5-2: dfn recommended layout, 3.3v output design. v in gnd v fb sw v in 12v v out 3.3v @ 1a c out c in v cc c vcc l1 c boost boost r t r b r en component value c in 2 x 10 f c out 2 x 10 f l1 15 h r t 31.2 k ? r b 10 k ? r en 1m ? c vcc 1f c boost 0.1 f en ? 2013-2014 microchip technology inc. ds20005255b-page 25 MCP16311/2 figure 5-3: mcp16312 - typical led driver application: 400 ma output. v in gnd v fb sw v in 12v i led = 400 ma c out c in v cc c vcc l1 c boost boost r b r en led component value c in 2 x 10 f c out 2 x 10 f l1 15 h r b 2 ? r en 1m ? c vcc 1f c boost 0.1 f led 1 x white led r b v fb i led ----------- = en MCP16311/2 ds20005255b-page 26 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 27 MCP16311/2 6.0 packaging information 6.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec ? designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 8-lead tdfn (2x3) example abm 309 25 part number code MCP16311t-e/mny abm mcp16312t-e/mny abu 8-lead msop (3x3 mm) example 16311e 309256 MCP16311/2 ds20005255b-page 28 ? 2013-2014 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging ? 2013-2014 microchip technology inc. ds20005255b-page 29 MCP16311/2 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging MCP16311/2 ds20005255b-page 30 ? 2013-2014 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging ? 2013-2014 microchip technology inc. ds20005255b-page 31 MCP16311/2 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging MCP16311/2 ds20005255b-page 32 ? 2013-2014 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging ? 2013-2014 microchip technology inc. ds20005255b-page 33 MCP16311/2 MCP16311/2 ds20005255b-page 34 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 35 MCP16311/2 appendix a: revision history revision b (november 2014) the following is the list of modifications: 1. added aec-q100 qualification information. 2. updated the typical applications section. 3. updated the dc characteristics table. 4. updated section 4.2.2 ?peak current mode control? . 5. updated the standard values in example 5-1 . 6. added a 24v option in ta b l e 5 - 1 . revision a (december 2013) ? original release of this document. MCP16311/2 ds20005255b-page 36 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 37 MCP16311/2 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . part no. x /xx package temperature range device device: MCP16311: high-efficiency, pfm/pwm integrated synchronous switch step-down regulator (msop only) MCP16311t: high-efficiency, pfm/pwm integrated synchronous switch step-down regulator (tape and reel) (msop and tdfn) mcp16312: high-efficiency, pfm integrated synchronous switch step-down regulator (msop only) mcp16312t: high-efficiency, pwm integrated synchronous switch step-down regulator (tape and reel) (msop and tdfn) temperature range: e = -40c to +125c (extended) package: mny* = plastic micro small outline package ms = plastic dual flat, no lead package - 2x3x0.75mm body *y = nickel palladium gold manufacturing designator. examples: a) MCP16311-e/ms: extended temperature, 8ld msop package b) MCP16311t-e/ms: tape and reel, extended temperature, 8ld msop package c) MCP16311t-e/mny: tape and reel, extended temperature, 8ld 2 x 3 tdfn package a) mcp16312-e/ms: extended temperature, 8ld msop package b) mcp16312t-e/ms: tape and reel, extended temperature, 8ld msop package c) mcp16312t-e/mny: tape and reel, extended temperature, 8ld 2 x 3 tdfn package MCP16311/2 ds20005255b-page 38 ? 2013-2014 microchip technology inc. notes: ? 2013-2014 microchip technology inc. ds20005255b-page 39 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, flexpwr, jukeblox, k ee l oq , k ee l oq logo, kleer, lancheck, medialb, most, most logo, mplab, optolyzer, pic, picstart, pic 32 logo, righttouch, spynic, sst, sst logo, superflash and uni/o are registered trademarks of microchip tec hnology incorporated in the u.s.a. and other countries. the embedded control solutions company and mtouch are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, ecan, in-circuit serial programming, icsp, inter-chip connectivity, kleernet, kleernet logo, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, multitrak, netdetach, omniscient code generation, picdem, picdem.net, pickit, pictail, righttouch logo, real ice, sqi, serial quad i/o, total endurance, tsharc, usbcheck, varisense, viewspan, wiperlock, wireless dna, and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. gestic is a registered trademar ks of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2013-2014, microchip technology incorporated, printed in the u.s.a., all rights reserved. isbn: 978-1-63276-806-3 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == ds20005255b-page 40 ? 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